az23-v-g-series document number 85867 rev. 1.0, 05-mar-09 vishay semiconductors www.vishay.com 1 20512 1 20456 2 3 1 for technical support, please contact: diodesssp@vishay.com small signal zener diodes, dual features ? dual silicon plana r zener diodes, common anode ? the zener voltages are graded according to the international e 24 standard ? the parameters are valid for both diodes in one case. v z and r zj of the two diodes in one case is 5 % ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec mechanical data case: sot-23 weight: approx. 8.1 mg packaging codes/options: gs18/10 k per 13" reel, (8 mm tape), 10 k/box gs08/3 k per 7" reel, (8 mm tape), 15 k/box absolute maximum ratings t amb = 25 c, unless otherwise specified thermal characteristics t amb = 25 c, unless otherwise specified ** please see document ?vishay material category policy?: www.vishay.com/doc?99902 parameter test conditions symbol value unit power dissipation device on fiberglass substrate, see layout on page 6 p tot 300 mw parameter test conditions symbol value unit thermal resistance junction to ambient air device on fiberglass substrate, see layout on page 6 r thja 420 k/w junction temperature t j 150 c storage temperature range t stg - 65 to + 150 c
www.vishay.com 2 document number 85867 rev. 1.0, 05-mar-09 az23-v-g-series vishay semiconductors for technical support, please contact: diodesssp@vishay.com electrical characteristics note 1) tested with pulses t p = 5 ms part number marking code zener voltage range 1) dynamic resistance te s t current temperature coefficient of zener voltage reverse voltage v z at i zt r zj at i zt = 5 ma, f = 1 khz r zj at i zt = 1 ma, f = 1 khz i zt vz at i zt v r at i r = 100 na v ma 10 -4 /c v min. max. min. max. az23c2v7-v-g d41 2.5 2.9 75 (< 83) < 500 5 - 9 - 4 - az23c3v0-v-g d42 2.8 3.2 80 (< 95) < 500 5 - 9 - 3 - az23c3v3-v-g d43 3.1 3.5 80 (< 95) < 500 5 - 8 - 3 - az23c3v6-v-g d44 3.4 3.8 80 (< 95) < 500 5 - 8 - 3 - az23c3v9-v-g d45 3.7 4.1 80 (< 95) < 500 5 - 7 - 3 - az23c4v3-v-g d46 4 4.6 80 (< 95) < 500 5 - 6 - 1 - az23c4v7-v-g d47 4.4 5 70 (< 78) < 500 5 - 5 2 - az23c5v1-v-g d48 4.8 5.4 30 (< 60) < 480 5 - 3 4 > 0.8 az23c5v6-v-g d49 5.2 6 10 (< 40) < 400 5 - 2 6 > 1 az23c6v2-v-g d50 5.8 6.6 4.8 (< 10) < 200 5 - 1 7 > 2 az23c6v8-v-g d51 6.4 7.2 4.5 (< 8) < 150 5 2 7 > 3 az23c7v5-v-g d52 7 7.9 4 (< 7) < 50 5 - 3 7 > 5 az23c8v2-v-g d53 7.7 8.7 4.5 (< 7) < 50 5 4 7 > 6 az23c9v1-v-g d54 8.5 9.6 4.8 (< 10) < 50 5 5 8 > 7 az23c10-v-g d55 9.4 10.6 5.2 (< 15) < 70 5 5 8 > 7.5 az23c11-v-g d56 10.4 11.6 6 (< 20) < 70 5 5 9 > 8.5 az23c12-v-g d57 11.4 12.7 7 (< 20) < 90 5 6 9 > 9 az23c13-v-g d58 12.4 14.1 9 (< 25) < 110 5 7 9 > 10 az23c15-v-g d59 13.8 15.6 11 (< 30) < 110 5 7 9 > 11 az23c16-v-g d60 15.3 17.1 13 (< 40) < 170 5 8 9.5 > 12 az23c18-v-g d61 16.8 19.1 18 (< 50) < 170 5 8 9.5 > 14 az23c20-v-g d62 18.8 21.2 20 (< 50) < 220 5 8 10 > 15 az23c22-v-g d63 20.8 23.3 25 (< 55) < 220 5 8 10 > 17 az23c24-v-g d64 22.8 25.6 28 (< 80) < 220 5 8 10 > 18 az23c27-v-g d65 25.1 28.9 30 (< 80) < 250 5 8 10 > 20 az23c30-v-g d66 28 32 35 (< 80) < 250 5 8 10 > 22.5 az23c33-v-g d67 31 35 40 (< 80) < 250 5 8 10 > 25 az23c36-v-g d68 34 38 40 (< 90) < 250 5 8 10 > 27 az23c39-v-g d69 37 41 50 (< 90) < 300 5 10 12 > 29 az23c43-v-g d70 40 46 60 (< 100) < 700 5 10 12 > 32 az23c47-v-g d71 44 50 70 (< 100) < 750 5 10 12 > 35 az23c51-v-g d72 48 54 70 (< 100) < 750 5 10 12 > 38
az23-v-g-series document number 85867 rev. 1.0, 05-mar-09 vishay semiconductors www.vishay.com 3 for technical support, please contact: diodesssp@vishay.com electrical characteristics note 1) tested with pulses t p = 5 ms part number marking code zener voltage range 1) dynamic resistance te s t current temperature coefficient of zener voltage reverse voltage v z at i zt r zj at i zt = 5 ma, f = 1 khz r zj at i zt = 1 ma, f = 1 khz i zt vz at i zt v r at i r = 100 na v ma 10 -4 /c v min. max. min. max. az23b2v7-v-g d41 2.65 2.75 75 (< 83) < 500 5 - 9 - 4 - az23b3v0-v-g d42 2.94 3.06 80 (< 95) < 500 5 - 9 - 3 - az23b3v3-v-g d43 3.23 3.37 80 (< 95) < 500 5 - 8 - 3 - az23b3v6-v-g d44 3.53 3.67 80 (< 95) < 500 5 - 8 - 3 - az23b3v9-v-g d45 3.82 3.98 80 (< 95) < 500 5 - 7 - 3 - az23b4v3-v-g d46 4.21 4.39 80 (< 95) < 500 5 - 6 - 1 - az23b4v7-v-g d47 4.61 4.79 70 (< 78) < 500 5 - 5 2 - az23b5v1-v-g d48 5 5.2 30 (< 60) < 480 5 - 3 4 > 0.8 az23b5v6-v-g d49 5.49 5.71 10 (< 40) < 400 5 - 2 6 > 1 az23b6v2-v-g d50 6.08 6.32 4.8 (< 10) < 200 5 - 1 7 > 2 az23b6v8-v-g d51 6.66 6.94 4.5 (< 8) < 150 5 2 7 > 3 az23b7v5-v-g d52 7.35 7.65 4 (< 7) < 50 5 - 3 7 > 5 az23b8v2-v-g d53 8.04 8.36 4.5 (< 7) < 50 5 4 7 > 6 az23b9v1-v-g d54 8.92 9.28 4.8 (< 10) < 50 5 5 8 > 7 az23b10-v-g d55 9.8 10.2 5.2 (< 15) < 70 5 5 8 > 7.5 az23b11-v-g d56 10.8 11.2 6 (< 20) < 70 5 5 9 > 8.5 az23b12-v-g d57 11.8 12.2 7 (< 20) < 90 5 6 9 > 9 az23b13-v-g d58 12.7 13.3 9 (< 25) < 110 5 7 9 > 10 az23b15-v-g d59 14.7 15.3 11 (< 30) < 110 5 7 9 > 11 az23b16-v-g d60 15.7 16.3 13 (< 40) < 170 5 8 0.5 > 12 az23b18-v-g d61 17.6 18.4 18 (< 50) < 170 5 8 0.5 > 14 az23b20-v-g d62 19.6 20.4 20 (< 50) < 220 5 8 10 > 15 az23b22-v-g d63 21.6 22.4 25 (< 55) < 220 5 8 10 > 17 az23b24-v-g d64 23.5 24.5 28 (< 80) < 220 5 8 10 > 18 az23b27-v-g d65 26.5 27.5 30 (< 80) < 250 5 8 10 > 20 az23b30-v-g d66 29.4 30.6 35 (< 80) < 250 5 8 10 > 22.5 az23b33-v-g d67 32.3 33.7 40 (< 80) < 250 5 8 10 > 25 az23b36-v-g d68 35.3 36.7 40 (< 90) < 250 5 8 10 > 27 az23b39-v-g d69 38.2 39.8 50 (< 90) < 300 5 10 12 > 29 az23b43-v-g d70 42.1 43.9 60 (< 100) < 700 5 10 12 > 32 az23b47-v-g d71 46.1 47.9 70 (< 100) < 750 5 10 12 > 35 az23b51-v-g d72 50 52 70 (< 100) < 750 5 10 12 > 38
www.vishay.com 4 document number 85867 rev. 1.0, 05-mar-09 az23-v-g-series vishay semiconductors for technical support, please contact: diodesssp@vishay.com typical characteristics t amb = 25 c, unless otherwise specified figure 1. forward characteristics figure 2. admissible power dissi pation vs. ambient temperature figure 3. dynamic resistance vs. zener current 1 8 114 ma 10 3 10 2 10 -1 10 -2 10 -3 10 -4 10 -5 10 1 i f v f 0 0.2 0.4 0.6 0. 8 1 v t j = 100 c t j = 25 c 1 8 115 m w 400 100 0 300 200 p tot t am b 0 100 200 c 500 1 8 120 10 3 7 5 4 3 2 7 5 4 3 2 10 0.1 2345 2345 110 ma r zj i z t j = 25 c 47 + 51 43 39 36 10 2 figure 4. thermal differential resistance vs. zener voltage figure 5. dynamic resistance vs. zener voltage figure 6. temperature dependence of zener voltage vs. zener voltage 1 8 121 10 3 5 4 3 2 5 4 3 2 10 2 1 r zth 5 4 3 2 10 1 2345 2345 10 100 v v z at i z = 5 ma negati v e positi v e v z t j r zth = r tha x v z x 1 8 122 100 7 5 4 3 2 7 5 4 3 2 1 r zj 10 t j = 25 c i z = 5 ma 1 2345 2345 10 100 v v z 1 8 123 25 20 15 10 5 0 - 5 m v /c v z t j 1 2345 2345 10 100 v v z 5 ma 1 ma 20 ma i z =
az23-v-g-series document number 85867 rev. 1.0, 05-mar-09 vishay semiconductors www.vishay.com 5 for technical support, please contact: diodesssp@vishay.com figure 7. change of zener voltag e vs. junction temperature figure 8. temperature dependenc e of zener voltage vs. zener voltage figure 9. change of zener voltag e vs. junction temperature 1 8 124 v z at i z = 5 ma 25 15 10 8 7 6.2 5.9 5.6 5.1 4.7 3.6 0. 8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 - 1 - 0.2 v z v t j 0204060 8 0 100 120 140 c 1 8 125 100 8 0 60 40 20 0 m v /c v z t j 0 20 40 8 0 60 100 v v z i z = 5 ma 1 8 126 9 7 5 3 1 - 1 v v z 8 6 4 2 0 0 100 60 t j 20 40 120 8 0 140 c i z = 2 ma 51 43 36 figure 10. change of zener voltage from turn-on up to the point of thermal equilibrium vs. zener voltage figure 11. change of zener voltage from turn-on up to the point of thermal equilibrium vs. zener voltage figure 12. breakdown characteristics 1 8 127 1.6 1.2 0. 8 0.4 0 - 0.4 v v z 1.4 1 0.6 0.2 - 0.2 1 2345 2345 10 100 v v z at i z = 5 ma v z = r zth x i z 1 8 12 8 5 4 3 2 1 0 v v z 0 20 40 60 8 0 100 v v z i z = 5 ma i z = 2 ma v z = r zth x i z 1 8 111 test c u rrent i z 5 ma 1 234567 8 9 0 10 v v z 3.3 3.9 5.6 2.7 ma 50 40 30 20 10 0 l z t j = 25 c 8 .2 6. 8 4.7
www.vishay.com 6 document number 85867 rev. 1.0, 05-mar-09 az23-v-g-series vishay semiconductors for technical support, please contact: diodesssp@vishay.com layout for r thja test thickness: fiberglass 0.059 inches (1.5 mm) copper leads 0.012 inches (0.3 mm) figure 13. breakdown characteristics 1 8 112 10 20 30 0 40 v v z ma 30 20 10 0 l z 33 test c u rrent i z 5 ma t j = 25 c 10 12 15 1 8 22 27 36 figure 14. breakdown characteristics 1 8 113 ma 10 8 6 4 2 0 l z 10 20 30 40 50 60 70 8 090 0 100 v v z 43 39 test c u rrent i z 5 ma t j = 25 c 47 51 17451 15 (0.59) 12 (0.47) 0. 8 (0.03) 5 (0.2) 7.5 (0.3) 3 (0.12) 1 (0.4) 1 (0.4) 2 (0. 8 ) 2 (0. 8 ) 1.5 (0.06) 5.1 (0.2)
az23-v-g-series document number 85867 rev. 1.0, 05-mar-09 vishay semiconductors www.vishay.com 7 for technical support, please contact: diodesssp@vishay.com package dimensions in millimeters (inches) : sot-23 foot print recommendation: rev. 8 - date: 23.sept.2009 17418 document no.: 6.541-5014.01-4 0.9 (0.035) 1 (0.039) 0.9 (0.035) 1 (0.039) 1.43 (0.056) 0.45 (0.018) 0.35 (0.014) 2.8 (0.110) 3.1 (0.122) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 0.1 (0.004) max. 2.35 (0.093) 2.6 (0.102) 0.175 (0.007) 0.098 (0.004) 1.15 (0.045) 0.9 (0.035) 1.20 (0.047) 0.95 (0.037) 0.95 (0.037) 2 (0.079) 0.7 (0.028) 0.9 (0.035) 0 to 8 0.2 (0.008) 0.3 (0.012) 0.5 (0.020) 0.550 ref. (0.022 ref.)
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